Semiconductor device

Details Semiconductor device Semiconductor device

2008-06-12

2009-11-10

Doan, Jennifer (Department: 2874)

Optical waveguides

Miscellaneous

C257S107000, C257S133000, C257S139000, C257S140000, C257S341000

Reexamination Certificate

active

07616859

ABSTRACT:
A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.

REFERENCES:
patent: 5360984 (1994-11-01), Kirihata
patent: 6399998 (2002-06-01), Chang
patent: 6459139 (2002-10-01), Watanabe et al.
patent: 6639295 (2003-10-01), Majumdar et al.
patent: 6737705 (2004-05-01), Momota et al.
patent: 6809349 (2004-10-01), Yamaguchi et al.
patent: 7078740 (2006-07-01), Yamaguchi et al.
patent: 7112868 (2006-09-01), Willmeroth et al.
patent: 7154145 (2006-12-01), Takahashi
patent: 7170106 (2007-01-01), Yamaguchi et al.
patent: 7319257 (2008-01-01), Yamaguchi et al.
patent: 2005/0274995 (2005-12-01), Park
patent: 2007/0069287 (2007-03-01), Takahashi
patent: 2007/0108468 (2007-05-01), Takahashi
patent: A-5-57235 (1993-03-01), None
patent: A-2005-243936 (2005-09-01), None
patent: A-2006-173296 (2006-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4119603