Semiconductor device

Details Semiconductor device Semiconductor device

2004-02-09

2009-08-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S506000, C257S565000, C257SE29171

Reexamination Certificate

active

07576406

ABSTRACT:
A plurality of the same kind of npn-type bipolar transistors are disposed regularly on a semiconductor layer that is provided over an insulation layer. The plurality of unit bipolar transistors are connected in parallel, thereby to form a plurality of desired bipolar transistors. A deep trench isolation surrounds a group of or the whole of the plurality of unit bipolar transistors that are connected in parallel, for a plurality of desired bipolar transistor that require thermal stability.

REFERENCES:
patent: 4948748 (1990-08-01), Kitahara et al.
patent: 5374844 (1994-12-01), Moyer
patent: 5508550 (1996-04-01), Morishita et al.
patent: 6300669 (2001-10-01), Kinoshita
patent: 10-173040 (1998-06-01), None
patent: 2002-57219 (2002-02-01), None
patent: 2002-299466 (2002-10-01), None

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