Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-09
2009-12-29
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185260, C365S185270
Reexamination Certificate
active
07639541
ABSTRACT:
A semiconductor device includes a circuit forming area and a memory area including memory cells, first and second wells, a first conductor film formed over both wells and a second conductor film formed over the first well. First semiconductor regions are formed in the first region and a second semiconductor region is formed in the second region. The memory cells each include a capacitance element, including the first conductor film and second region, an element for reading data, including the first conductor film and first regions, and a selection field effect transistor, including the second conductor film and first regions. A length of the first conductor film of the capacitance element is larger than a length of the first conductor film of the element for reading data. A word line of the memory cell is connected to the second semiconductor region. During a reading data operation, a first bit line of the memory cell is connected to the first semiconductor region of the element for reading data via the selection field effect transistor.
REFERENCES:
patent: 5477068 (1995-12-01), Ozawa
patent: 5917751 (1999-06-01), Wakita
patent: 7349253 (2008-03-01), Perner et al.
patent: 7460396 (2008-12-01), Oka et al.
patent: 2001-185633 (2001-07-01), None
patent: 2001-257324 (2001-09-01), None
Oka Yasushi
Shiba Kazuyoshi
Antonelli, Terry Stout & Kraus, LLP.
Luu Pho M.
Renesas Technology Corp.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4101057