Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-02

2009-10-20

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

C438S572000

Reexamination Certificate

active

07605441

ABSTRACT:
A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.

REFERENCES:
patent: 6690035 (2004-02-01), Yokogawa et al.
patent: 7285806 (2007-10-01), Nishi et al.
patent: 2003-60212 (2003-02-01), None
patent: 2004-31896 (2004-01-01), None

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