Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-08-10
1996-03-26
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257786, 257904, H01L 2702, H01L 2902
Patent
active
055023274
ABSTRACT:
A semiconductor device includes a first layer made of a first type semiconductor, a second layer provided on the first layer and made of a second type semiconductor, the second layer including low resistance diffusion parts and high resistance diffusion parts, where the first and second type semiconductors are one and the other of n-type and p-type semiconductors, a third layer provided on the low resistance diffusion parts of the second layer and made of the first semiconductor type, thereby forming a pair of transistors which form a flip-flop and use the high resistance diffusion parts as balanced load resistors, and at least first and second isolations isolating the flip-flop. Each of the high resistance diffusion parts of the second layer comprise a first linear part separated by a predetermined distance from the first isolation, a second linear part separated by the predetermined distance from the second isolation and having a width identical to that of the first linear part, and a third linear part connecting the first and second linear parts.
REFERENCES:
patent: 4486770 (1984-12-01), Woodward
patent: 4926378 (1990-05-01), Uchida et al.
Muller et al. "Device Electronics for Integrated Circuits", John Wiley & Sons .COPYRGT.1986 pp. 113-114.
Fujitsu Limited
Monin, Jr. Donald L.
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