Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-12

2009-12-01

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Solder wettable contact, lead, or bond

C257S750000, C257S751000, C257S766000, C257S777000, C257S781000, C257SE21508, C257SE21510, C257SE23020, C257SE23021, C438S612000, C438S613000, C438S614000

Reexamination Certificate

active

07626275

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first metal film on a back surface of the semiconductor substrate, a second metal film on the first metal film, and a third metal film on the second metal film. The first metal film forms an alloy with a solder. The second metal film causes isothermal solidification of the solder. The third metal film improves solder wetting properties or inhibits oxidation. Further, in a method for die-bonding a semiconductor device, a specific metal is diffused into a solder, when the solder melts, to transform the solder into a high melting point alloy, thereby causing isothermal solidification of the solder. The specific metal is different from the metal of the solder.

REFERENCES:
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patent: 5179041 (1993-01-01), Yano et al.
patent: 7304491 (2007-12-01), Farnworth et al.
patent: 7410833 (2008-08-01), Fogel et al.
patent: 57-015432 (1982-01-01), None
patent: 6-7990 (1994-01-01), None

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