Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-11-03
2009-10-20
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE21546
Reexamination Certificate
active
07605442
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.
REFERENCES:
patent: 6388304 (2002-05-01), Matsuoka et al.
patent: 6441444 (2002-08-01), Tsuji et al.
patent: 6541350 (2003-04-01), Chen
patent: 2003/0173641 (2003-09-01), Ohta et al.
patent: 2004/0032006 (2004-02-01), Yun et al.
patent: 2005/0032275 (2005-02-01), Toda et al.
patent: 2005/0167778 (2005-08-01), Kim et al.
patent: 2006/0001104 (2006-01-01), Ookura
patent: 2006/0255426 (2006-11-01), Inoue et al.
patent: 2003-179157 (2003-06-01), None
patent: 2003-272306 (2003-09-01), None
A. Shimizu et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, International Electron Devices Meeting, Technology Digest, 2001, pp. 19.4.1-19.4.4.
K. Goto et al, “High Performance 35 nm Gate CMOSFETs with Vertical Scaling and Total Stress Control for 65 nm Technology”, Symposium on VLSI Technology Digest of Technical Papers, 2003, pp. 49-50.
S. Ito et al, “Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design”, International Electron Devices Meeting, Technology Digest, 2000, pp. 10.7.1-10.7.4.
Fujii Osamu
Sanuki Tomoya
Foley & Lardner LLP
Ha Nathan W
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4077420