Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-06-05
2009-02-10
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S012000, C257S017000, C257S079000
Reexamination Certificate
active
07488970
ABSTRACT:
The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.
REFERENCES:
patent: 5670798 (1997-09-01), Schetzina
patent: 11-177175 (1999-07-01), None
Nakagawa Daisuke
Nishida Toshio
Ohta Hiroaki
Hogan & Hartson LLP
Patton Paul E
Rohm & Co., Ltd.
Smith Zandra V.
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