Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-06-15
2009-10-06
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257SE21540
Reexamination Certificate
active
07598589
ABSTRACT:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
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Arai Masatoshi
Iwamoto Satoshi
Noro Fumihiko
Takahashi Nobuyoshi
Budd Paul A
Jackson, Jr. Jerome
McDermott Will & Emery LLP
Panasonic Corporation
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