Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-04
2009-12-01
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29145, C257SE29273
Reexamination Certificate
active
07626201
ABSTRACT:
A semiconductor device can include a channel including a zinc-indium oxide film.
REFERENCES:
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 7145174 (2006-12-01), Chiang et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
Chiang Hai Q.
Dehuff Nicole L.
Hoffman Randy L.
Hong David
Wager John F.
Hewlett--Packard Development Company, L.P.
Nguyen Joseph
Parker Kenneth A
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4069046