Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257S758000, C257SE23068, C257SE23069

Reexamination Certificate

active

07605464

ABSTRACT:
A semiconductor device includes: a semiconductor substrate having an integrated circuit formed thereon and an electrode electrically coupled to the integrated circuit; a passivation film formed on a surface of the semiconductor substrate, the surface having the electrode formed thereon; a first metal layer formed so as to come into contact with the passivation film; a resin layer formed on the first metal layer; a wiring formed so as to be electrically coupled to the electrode and reach an upper surface of the resin layer; and a second metal layer formed so as to be in contact with the first metal layer and reach the upper surface of the resin layer.

REFERENCES:
patent: 6940160 (2005-09-01), Hanaoka et al.
patent: 7132742 (2006-11-01), Yamaguchi
patent: 7298042 (2007-11-01), Yamaguchi
patent: 2007/0126030 (2007-06-01), Ito
patent: 2008/0042259 (2008-02-01), Yamaguchi
patent: 11-297873 (1999-10-01), None
patent: 2001-244360 (2001-09-01), None
patent: 2003-232790 (2003-10-01), None
patent: 2004-104102 (2004-04-01), None
patent: WO00/55898 (2000-09-01), None

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