Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With emitter region having specified doping concentration...
Reexamination Certificate
2005-09-12
2009-02-17
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With emitter region having specified doping concentration...
C257S331000, C257S565000, C257S655000, C257SE29201, C257SE29214
Reexamination Certificate
active
07492034
ABSTRACT:
A semiconductor device (1, 20-80) has an emitter terminal (2), a collector terminal (3) and also a semiconductor body (4) provided between emitter terminal (2) and collector terminal (3). An emitter zone (5, 70) is formed in the semiconductor body (4), said emitter zone at least partially adjoining the emitter terminal (2) and also having a first interface (16) facing the emitter terminal (2) and a second interface (17) facing the collector terminal. The semiconductor device has at least one MOS structure (8, 81) which pervades the emitter zone or adjoins the latter, and which is configured such that corresponding MOS channels (11, 14) induced by the MOS structure (8, 81) within the emitter zone (5, 70) are at a distance from the first interface (16) of the emitter zone (5, 70).
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Ho Hoang-Quan T
Huynh Andy
Infineon - Technologies AG
Maginot Moore & Beck
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