Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-07

2008-12-02

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

C365S185260, C365S185280, C365S185290, C257S316000

Reexamination Certificate

active

07460396

ABSTRACT:
In a data program/erase device of a nonvolatile memory cell, data are re-written by means of an FN tunnel current of an entire channel surface. In a buried n-well of a semiconductor substrate in a flash memory formation region, p wells are placed in the form isolated from each other. In each of the p wells, a capacitor portion, a capacitor portion for programming/erasing data and an MIS•FET for reading data are placed. In the capacitor portion for programming/erasing data, rewriting (programming and erasing) of data is performed by means of an FN tunnel current of an entire channel surface.

REFERENCES:
patent: 6466482 (2002-10-01), Shukuri et al.
patent: 6788574 (2004-09-01), Han et al.
patent: 6906954 (2005-06-01), Shukuri et al.
patent: 7388777 (2008-06-01), Shiba et al.
patent: 2001-185633 (2001-07-01), None
patent: 2001-257324 (2001-09-01), None

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