Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2004-09-08
2008-11-11
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257SE33010, C257SE33024, C372S045010
Reexamination Certificate
active
07449723
ABSTRACT:
A semiconductor device is disclosed in which a barrier layer is deposited on the sides of the mesa. The barrier layer may comprise a semiconductor material. The barrier layer reduces diffusion of dopants into the active region of the device.
REFERENCES:
patent: 5260230 (1993-11-01), Kondo
patent: 5404027 (1995-04-01), Haase et al.
patent: 5956358 (1999-09-01), Sasaki
patent: 6664605 (2003-12-01), Akulova et al.
patent: 6706542 (2004-03-01), Geva et al.
patent: 2364600 (2002-01-01), None
patent: 1286439 (2003-02-01), None
patent: 5067849 (1993-03-01), None
patent: 2001044565 (2001-02-01), None
Massa John Stephen
Wood Simon Andrew
Avago Technologies Fiber (IP) Singapore Pte. Ltd.
Jackson, Jr. Jerome
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