Semiconductor device

Details Semiconductor device Semiconductor device

2007-07-02

2008-12-23

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185280

Reexamination Certificate

active

07468913

ABSTRACT:
A highly-reliable semiconductor device is realized. For example, each memory cell of a nonvolatile memory included in the semiconductor device is configured to include a source and a drain formed in a P-well, a memory node which is formed on the P-well between the source and the drain via a tunnel insulator and is insulated from its periphery, and a control gate formed on the memory node via an interlayer insulator. When a programming operation using channel hot electrons is to be performed in such a configuration, the P-well is put into an electrically floating state.

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