Semiconductor device

Details Semiconductor device Semiconductor device

1987-11-16

1989-05-09

Wojciechowicz, Edward J.

357 45, 357 48, 357 49, 357 52, 357 55, 357 59, H01H 2704

Patent

active

048293610

ABSTRACT:
A semiconductor device wherein a layer doped with impurities is provided between a buried layer and an epitaxial layer, said layer doped with impurities having a conductivity of the type opposite to that of said buried layer and said epitaxial layer, a reversely biasing voltage is applied across the buried layer and the layer doped with impurities, and side surfaces of the epitaxial layer are surrounded by an insulator.
This helps effectively prevent the element formed in the epitaxial layer from being affected by .alpha.-particles and greatly improve reliability of the semiconductor device.

REFERENCES:
patent: 4476480 (1984-10-01), Fuse
patent: 4573064 (1986-02-01), McLevige et al.

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