Semiconductor device

Details Semiconductor device Semiconductor device

2004-11-29

2008-11-25

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S206000, C257S202000

Reexamination Certificate

active

07456446

ABSTRACT:
A semiconductor device of the generation with the minimum processing dimensions of 90 nm, or later, wherein variation of processing dimensions of gate electrodes in a logic block and a power source noise are suppressed; wherein a gate electrode formed to have a comb-shaped pattern is formed on a normal cell region, a dummy gate electrode formed to have a comb-shaped pattern is formed on a vacant region, a wiring for applying a predetermined voltage is connected respectively to at least a part of the dummy gate and the semiconductor substrate (source drain regions), and an electrostatic capacity between the part of the dummy gate electrode and the semiconductor substrate constitutes a decoupling capacitor of the power source.

REFERENCES:
patent: 6020616 (2000-02-01), Bothra et al.
patent: 6516457 (2003-02-01), Kondou
patent: 6707107 (2004-03-01), Kido
patent: 2001/0004122 (2001-06-01), Ito
patent: 2003/0132464 (2003-07-01), Yamaguchi et al.
patent: 2004/0213029 (2004-10-01), Hirata et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4031582