Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-03-03
2008-11-25
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S015000, C257S200000
Reexamination Certificate
active
07456422
ABSTRACT:
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.
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Official Communication from German Patent Office mailed Dec. 4, 2006 with English translation (7 pages).
Correspondence received from the German Patent Office mailed Apr. 30, 2008 with English translation (7 pages).
Ebe Hiroji
Kawaguchi Kenichi
Uetake Ayahito
Fujitsu Limited
Green Telly D
Kratz, Quintos & Hanson
Smith Zandra
The University of Tokyo
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