Semiconductor device

Details Semiconductor device Semiconductor device

2006-07-24

2008-12-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S197000, C257SE29188, C257SE29189, C257S185000, C257S335000

Reexamination Certificate

active

07462892

ABSTRACT:
A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high impurity concentration, and each of the heavily doped thin sublayers has an impurity concentration higher than those of semiconductor layers adjacent to each heavily doped thin sublayer.

REFERENCES:
patent: 6822274 (2004-11-01), Yi et al.
patent: 2002/0070390 (2002-06-01), Chow
patent: 2003/0136956 (2003-07-01), Niwa et al.
patent: 05-136159 (1993-06-01), None
patent: 07-211729 (1995-08-01), None
Y. S. Lin; Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor; Applied Physics Letters; vol. 83, No. 26, Dec. 29, 2003.

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