Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2005-12-27
2008-08-12
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23184
Reexamination Certificate
active
07411288
ABSTRACT:
A frame-shaped sidewall is provided on a metallic base plate surrounding a semiconductor element arranged on the metallic base plate, a first dielectric plate is arranged on one side of the semiconductor element and a first circuit pattern is formed on its surface, a second dielectric plate is arranged on another side of the semiconductor element and a second circuit pattern is formed and the first and the second dielectric plate. Power supply portions are provided on a part of the sidewall, through which a first or a second band-shaped conductors is penetrating. Third dielectric plates are arranged on the base plate between the band-shaped conductors and the first dielectric plate or the second dielectric plate, having a line conductor pattern formed on their surfaces. The surfaces of the third dielectric plate are arranged at a position lower than the band-shaped conductor and higher than the surface of the first or the second dielectric plate with respect to a main surface of the base plate. The first and second band-shaped conductors are connected with the first and second circuit pattern by wires W through the line conductor patterns formed on the surface of the third dielectric plate.
REFERENCES:
patent: 7091594 (2006-08-01), Kim et al.
patent: 2004/0046247 (2004-03-01), Tower
patent: 4-373155 (1992-12-01), None
patent: 2004-247514 (2004-09-01), None
Andujar Leonardo
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Soderholm Krista
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