Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-09

2008-10-07

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S775000, C257SE23145

Reexamination Certificate

active

07432598

ABSTRACT:
A semiconductor device capable of reducing electrical leakage generated when a contact hole is misaligned and a manufacturing method thereof is disclosed. The semiconductor device includes three conductive layers with various and different portions overlapping each other. The conductive layers are separated by insulating layers and connected by contact holes formed in the insulating layers between the overlapping potions. Thus, electric leakage, caused by misalignment when forming the contact hole to electrically connect the conductive layers to each other, can be prevented.

REFERENCES:
patent: 7180154 (2007-02-01), Cho et al.
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patent: 03 263855 (1991-11-01), None
patent: 04 093048 (1992-03-01), None
patent: 10-1995-0011555 (1995-10-01), None
patent: 10-1996-002483 (1996-01-01), None
patent: 10-1998-031103 (1998-07-01), None
EPO Search Report, Feb. 8, 2007, Application No. 06112404.6-1235.
EPO Office Action, Mar. 2, 2007, Application No. 06112404.6-1235.
Office Action of Chinese Patent Application No. 200610079084.8 dated Dec. 7, 2007.

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