Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Reexamination Certificate
2005-11-30
2008-10-14
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
C257S200000, C257S107000, C257S121000
Reexamination Certificate
active
07436004
ABSTRACT:
An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing through the semiconductor device, and a first reverse-blocking heterojunction diode provided on the semiconductor body, configured and arranged to block current reverse to the current switched on/off by the first switching mechanism.
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Proceedings of the 16thInternational Symposium on Power Semiconductor Devices & ICs, ISSPO'04, May 24-27, 2004, 5 pages.
T. Zhang, “Study on the Commutation Technique of Matrix Converter,” Journal of Tianjin University, vol. 35, No. 1, Jan. 2002, pp. 35-38.
Hayashi Tetsuya
Hoshi Masakatsu
Shimoida Yoshio
Shinohara Toshiro
Tanaka Hideaki
Foley & Lardner LLP
Luu Chuong A.
Nissan Motor Co,. Ltd.
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