Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2006-02-03
2008-10-07
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S103000, C257S094000
Reexamination Certificate
active
07432531
ABSTRACT:
A semiconductor device, which can accurately control carrier density, includes: a single crystal substrate; a semiconductor layer which is made of hexagonal crystal with 6 mm symmetry and is formed on the single crystal substrate; a source electrode, a drain electrode and a gate electrode which are formed on the semiconductor layer, where the main surfaces of a GaN layer and an AlGaN layer constituting the semiconductor layer respectively include C-axis of the hexagonal crystal, and a length direction of a channel region in the semiconductor layer is parallel to the C-axis of the hexagonal crystal.
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patent: 7132691 (2006-11-01), Tanabe et al.
patent: 2005/0039673 (2005-02-01), Ishida
patent: 2005/0279994 (2005-12-01), Ueda et al.
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patent: 2006/0076585 (2006-04-01), Kato et al.
patent: 2001-160656 (2001-06-01), None
patent: 2002-076329 (2002-03-01), None
Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 85, No. 6, pp. 3222-3233 (Mar. 15, 1999).
English Language Abstract of JP 2001-160656.
English Language Abstract of JP 2002-076329.
Greenblum & Bernstein P.L.C.
Matsushita Electric - Industrial Co., Ltd.
Nguyen Cuong Q
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