Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-10-30
2008-09-02
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S100000
Reexamination Certificate
active
07420223
ABSTRACT:
A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device100is equipped with a substrate2, having a bottom surface2band an element mounting surface2awhich is positioned on the opposite side of bottom surface2b, and a semiconductor element1, having a main surface1awhich is mounted onto element mounting surface2a. With L being the length in the long direction of main surface1and H being the distance between bottom surface2band element mounting surface2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface2ais a cavity2u, and element1is provided in cavity2u. A metal layer13is provided on the surface of cavity2u. In addition, when an electrode32which connects to an external part is provided on main surface1a, on the cavity side of the part which connects with electrode32, main surface1ais provided with a groove. The groove is for preventing outward flow of connection member34of electrode32.
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Higaki Kenjiro
Ishidu Sadamu
Ishii Takashi
Tsuzuki Yasushi
Darby & Darby
Sumitomo Electric Industries Ltd.
Tran Thien F
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