Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S100000

Reexamination Certificate

active

07420223

ABSTRACT:
A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device100is equipped with a substrate2, having a bottom surface2band an element mounting surface2awhich is positioned on the opposite side of bottom surface2b, and a semiconductor element1, having a main surface1awhich is mounted onto element mounting surface2a. With L being the length in the long direction of main surface1and H being the distance between bottom surface2band element mounting surface2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface2ais a cavity2u, and element1is provided in cavity2u. A metal layer13is provided on the surface of cavity2u. In addition, when an electrode32which connects to an external part is provided on main surface1a, on the cavity side of the part which connects with electrode32, main surface1ais provided with a groove. The groove is for preventing outward flow of connection member34of electrode32.

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patent: 02/103813 (2002-12-01), None
International Search Report for PCT/JP/2004/002982 mailed on Apr. 13, 2004.
Patent Abstracts of Japan for 10-150227 A published on Jun. 2, 1998.
Patent Abstracts of Japan for 2003-17754 A published on Jan. 17, 2003.
Patent Abstracts of Japan for 11-26647 A published on Jan. 29, 1999.
Patent Abstracts of Japan for 60-74485 A published on Apr. 26, 1985.
Patent Abstracts of Japan for 59-228778 A published on Dec. 22, 1984.
Patent Abstracts of Japan for 2002-232017 A published on Aug. 16, 2002.
PCT International Preliminary Report on Patentability for PCT/JP2004/002982 mailed Mar. 2, 2006.

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