Semiconductor device

Details Semiconductor device Semiconductor device

2006-02-24

2008-07-29

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240, C365S185140, C365S185030, C365S185260

Reexamination Certificate

active

07405971

ABSTRACT:
A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

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