Semiconductor device

Details Semiconductor device Semiconductor device

2004-10-06

2008-07-15

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257SE29007

Reexamination Certificate

active

07399999

ABSTRACT:
In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 Å. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.

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