Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including means for establishing a depletion region...
Reexamination Certificate
2005-02-28
2008-03-04
Malsawma, Lex (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including means for establishing a depletion region...
C257SE21040, C438S140000
Reexamination Certificate
active
07339249
ABSTRACT:
An insulating film is provided in a region surrounding a circuit region on a p type silicon substrate, and a frame-shaped electrode is provided to surround the circuit region on the insulating film. The region directly under the electrode at the surface of the p type silicon substrate is formed as a non-doped region with no impurity implanted. Then, a positive power supply potential is applied to the electrode. In this way, a depletion layer is formed directly under the electrode at the surface of the p type silicon substrate. Consequently, the substrate noise is shielded.
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Nakashiba Yasutaka
Yamamoto Ryota
Malsawma Lex
NEC Electronics Corporation
Nguyen Khiem D
Sughrue Mion Pllc.
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