Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257SE29141, C257S537000, C257S758000, C257SE23145

Reexamination Certificate

active

07425753

ABSTRACT:
A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower layer side insulator film, an underground insulator film having a silicon oxide-film that contains at least phosphor, or phosphor and boron in the uppermost layer formed on the lower layer side insulator film and the metal wiring pattern, and a connection hole formed in the underground insulator film on the metal wiring pattern. The metal thin-film-resistor object is formed covering the underground insulator film, and inside of the connection hole, and is electrically connected to the metal wiring pattern in the connection hole.

REFERENCES:
patent: 2003/0160285 (2003-08-01), Shiiki
patent: 56-58256 (1981-05-01), None
patent: 58-170 (1983-01-01), None
patent: 58-148443 (1983-09-01), None
patent: 61-100956 (1986-05-01), None
patent: 8-124729 (1996-05-01), None
patent: 2536303 (1996-07-01), None
patent: 2699559 (1997-09-01), None
patent: 2932940 (1999-05-01), None
patent: 3185677 (2001-05-01), None
patent: 2002-124639 (2002-04-01), None
patent: 2002-261237 (2002-09-01), None

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