Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C365S189020

Reexamination Certificate

active

07400034

ABSTRACT:
There is provided a large capacity memory such as a DRAM and an SDRAM n which bonding pads PS and PD are not located at the center, but are displaced from the center between memory array regions UL and UR, disposed on the upper side of a four-bank structure of banks0through3, and memory array regions DL and DR, disposed on the lower side thereof. Secondly, the disposition of the bonding pads PS and PD is staggered on the right and left such that the right half bonding pads PD are shifted up relative to the left half bonding pads by about 30 μm. Only a sense amplifier, a column decoder and a main amplifier, which need to be near to the memory array regions DL and DR, are disposed between the bonding pads PS and PD, and the lower memory array regions DL and DR, and further indirect peripheral circuits are disposed on the upper side of the bonding pads PS and PD.

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