Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-12-23
1999-01-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257194, 257197, 257252, 257288, H01L 2906
Patent
active
058566813
ABSTRACT:
The present invention relates to a semiconductor device in which an electric resistance in a carrier path is modulated by changing a voltage applied to the carrier path. The semiconductor device is provided with a semiconductor layer in which conductive particles are dispersed to scatter carriers, a first electrode, and a second electrode for passing the carriers through the semiconductor device in cooperation with the first electrode.
REFERENCES:
patent: 4961194 (1990-10-01), Kuroda et al.
patent: 4982248 (1991-01-01), Laibowitz et al.
patent: 5412231 (1995-05-01), Furuya
patent: 5455441 (1995-10-01), Awano
Fujitsu Limited
Prenty Mark V.
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