Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-22

2008-04-22

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S496000

Reexamination Certificate

active

11157580

ABSTRACT:
Disclosed herein are a method of manufacturing a semiconductor device, which can prevent a stepped gate from leaning and increase the channel length of the device, thus contributing to an increase in the degree of integration of the device, as well as a semiconductor device manufactured thereby. The method comprises the steps of: forming in a silicon substrate a isolation film defining an active region; selectively etching each of both sides of the active region to form a first recess and a first protrusion surrounded by the first recess and located at the central portion of the active region; selectively etching the bottom of the first recess and either side of the first protrusion to form a second recess and a second central protrusion surrounded by the second recess; and forming a gate on a portion of the active region extending from each of both edges of the second central protrusion to a portion of the second recess of the active region.

REFERENCES:
patent: 5998286 (1999-12-01), Chen et al.
patent: 6215142 (2001-04-01), Lee et al.
patent: 2005/0110074 (2005-05-01), Jang et al.
patent: 2006/0086987 (2006-04-01), Chen et al.

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