Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2008-03-11
2008-03-11
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Reexamination Certificate
active
11238189
ABSTRACT:
The semiconductor device has the CSP structure, and includes: a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps are arranged in two rows along the periphery of the semiconductor device. The electrode pads are arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring is extended from an electrode pad, and is connected to any one of the outermost solder bumps or any one of the inner solder bumps.
REFERENCES:
patent: 2006/0163728 (2006-07-01), Nakanishi et al.
patent: 2006/0180942 (2006-08-01), Kuroda et al.
patent: 2006/0180943 (2006-08-01), Miwa et al.
patent: 2006/0214189 (2006-09-01), Chen
patent: 2003-297961 (2003-10-01), None
Cantor Coburn LLP
Ha Nathan W
Rohm & Co., Ltd.
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