Semiconductor device

Details Semiconductor device Semiconductor device

2008-03-11

2008-03-11

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S185210, C365S063000

Reexamination Certificate

active

11713039

ABSTRACT:
The read speed of an on-chip nonvolatile memory enabling electric rewrite is increased. The nonvolatile memory has a hierarchal bit line structure having first bit lines specific to each of a plurality of memory arrays, a second bit line shared between the plurality of memory arrays, a first selector circuit selecting the first bit line for each of the memory arrays to connect the selected first bit line to the second bit line, and a sense amp arranged between the output of the first selector circuit and the second bit line. The hierarchal bit line structure having the divided memory arrays can reduce the input load capacity of the sense amp.

REFERENCES:
patent: 6147905 (2000-11-01), Seino
patent: 6275407 (2001-08-01), Otsuka
patent: 6275434 (2001-08-01), Yamada et al.
patent: 6452862 (2002-09-01), Tomotani
patent: 6480418 (2002-11-01), Tanaka et al.
patent: 6611446 (2003-08-01), Kawasumi
patent: 6760243 (2004-07-01), Winograd et al.
patent: 6839268 (2005-01-01), Osada et al.
patent: 6909644 (2005-06-01), Fujioka et al.
patent: 6930941 (2005-08-01), Nakase
patent: 6940762 (2005-09-01), Umezawa
patent: 6950898 (2005-09-01), Merritt et al.
patent: 7158429 (2007-01-01), Moscaluk et al.
patent: 2000-339983 (2000-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3939067