Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-09-16
2008-09-16
Ho, Tu-Tu V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE29141, C257S537000, C257S758000, C257SE23145
Reexamination Certificate
active
11230040
ABSTRACT:
A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower layer side insulator film, an underground insulator film having a silicon oxide-film that contains at least phosphor, or phosphor and boron in the uppermost layer formed on the lower layer side insulator film and the metal wiring pattern, and a connection hole formed in the underground insulator film on the metal wiring pattern. The metal thin-film-resistor object is formed covering the underground insulator film, and inside of the connection hole, and is electrically connected to the metal wiring pattern in the connection hole.
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Kato Hidenori
Mori Masahide
Watanabe Hirofumi
Cooper & Dunham LLP
Ho Tu-Tu V.
Ricoh & Company, Ltd.
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