Semiconductor device

Details Semiconductor device Semiconductor device

2008-03-25

2008-03-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C257S326000

Reexamination Certificate

active

11181721

ABSTRACT:
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

REFERENCES:
patent: 2002/0113257 (2002-08-01), Osabe et al.
patent: 2002-164449 (2002-07-01), None

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