Semiconductor device

Details Semiconductor device Semiconductor device

2007-08-21

2007-08-21

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S787000, C257S788000, C257SE23194, C438S106000, C438S128000

Reexamination Certificate

active

11075420

ABSTRACT:
There is provided a semiconductor device including a semiconductor chip which includes a semiconductor substrate and a multilayer interconnection structure formed thereon, the multilayer interconnection structure including an interlayer insulating film smaller in relative dielectric constant than an SiO2film, an encapsulating resin layer which covers a major surface of the semiconductor chip on a side of the multilayer interconnection structure and covers a side surface of the semiconductor chip, and a stress relaxing resin layer which is interposed between the semiconductor chip and the encapsulating resin layer, covers at least a part of an edge of the semiconductor chip on the side of the multilayer interconnection structure, and is smaller in Young's modulus than the encapsulating resin layer.

REFERENCES:
patent: 5737191 (1998-04-01), Horiuchi et al.
patent: 6680524 (2004-01-01), Minamio et al.
patent: 6777816 (2004-08-01), Kazama et al.
patent: 6822323 (2004-11-01), Kim et al.
patent: 2005/0145994 (2005-07-01), Edelstein et al.
patent: 09-246464 (1997-09-01), None
Hasunuma, M. et al., “Semiconductor Device”, U.S. Appl. No. 10/975,071, filed Oct. 28, 2004.

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