Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-13

2007-02-13

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S057000, C257S347000, C257S348000, C257SE27111, C257SE29295, C438S149000, C438S479000, C438S517000

Reexamination Certificate

active

11087652

ABSTRACT:
It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4710604 (1987-12-01), Shirasu et al.
patent: 5097297 (1992-03-01), Nakazawa
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5163220 (1992-11-01), Zeto et al.
patent: 5432122 (1995-07-01), Chae
patent: 5578897 (1996-11-01), Nomura et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5594296 (1997-01-01), Mitsutake et al.
patent: 5636042 (1997-06-01), Nakamura et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5659329 (1997-08-01), Yamanobe et al.
patent: 5759879 (1998-06-01), Iwasaki
patent: 5776803 (1998-07-01), Young
patent: 5841097 (1998-11-01), Esaka et al.
patent: 5847780 (1998-12-01), Kim et al.
patent: 5851862 (1998-12-01), Ohtani et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 5970368 (1999-10-01), Sasaki et al.
patent: 5981974 (1999-11-01), Makita
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 5994174 (1999-11-01), Carey et al.
patent: 6133583 (2000-10-01), Ohtani et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6283813 (2001-09-01), Kaneko et al.
patent: 6288414 (2001-09-01), Ahn
patent: 6291320 (2001-09-01), Yamazaki et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6355940 (2002-03-01), Koga et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6372562 (2002-04-01), Matsumoto
patent: 6387779 (2002-05-01), Yi et al.
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6424331 (2002-07-01), Ozawa
patent: 6429100 (2002-08-01), Yoneda
patent: 6433842 (2002-08-01), Kaneko et al.
patent: 6455360 (2002-09-01), Miyasaka
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6482721 (2002-11-01), Lee
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6512246 (2003-01-01), Tanabe
patent: 6555875 (2003-04-01), Kawasaki et al.
patent: 6566179 (2003-05-01), Murley et al.
patent: 6583440 (2003-06-01), Yasukawa
patent: 6602744 (2003-08-01), Ino et al.
patent: 6602758 (2003-08-01), Kazilyalli et al.
patent: 6632696 (2003-10-01), Kimura et al.
patent: 6653212 (2003-11-01), Yamanaka et al.
patent: 6700133 (2004-03-01), Ohtani et al.
patent: 6727122 (2004-04-01), Seo et al.
patent: 6759628 (2004-07-01), Ino et al.
patent: 6812491 (2004-11-01), Kato et al.
patent: 6841434 (2005-01-01), Miyairi et al.
patent: 6841797 (2005-01-01), Isobe et al.
patent: 6847050 (2005-01-01), Yamazaki et al.
patent: 6861614 (2005-03-01), Tanabe et al.
patent: 6862008 (2005-03-01), Yamazaki et al.
patent: 6875998 (2005-04-01), Kato et al.
patent: 6884668 (2005-04-01), Yamazaki et al.
patent: 6906343 (2005-06-01), Yamazaki
patent: 2001/0000243 (2001-04-01), Sugano et al.
patent: 2001/0000627 (2001-05-01), Hayakawa et al.
patent: 2001/0035526 (2001-11-01), Yamazaki et al.
patent: 2001/0052598 (2001-12-01), Koga et al.
patent: 2002/0004292 (2002-01-01), Yamazaki et al.
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2002/0060322 (2002-05-01), Tanabe et al.
patent: 2002/0075208 (2002-06-01), Bae et al.
patent: 2002/0096680 (2002-07-01), Sugano et al.
patent: 2002/0098628 (2002-07-01), Hamada et al.
patent: 2002/0119609 (2002-08-01), Hatano
patent: 2002/0121665 (2002-09-01), Kawasaki et al.
patent: 2002/0134981 (2002-09-01), Nakamura et al.
patent: 2003/0001800 (2003-01-01), Nakajima et al.
patent: 2003/0057418 (2003-03-01), Asano
patent: 2003/0061984 (2003-04-01), Maekawa et al.
patent: 2003/0128200 (2003-07-01), Yumoto
patent: 2003/0141505 (2003-07-01), Isobe et al.
patent: 2003/0141521 (2003-07-01), Isobe et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183854 (2003-10-01), Kato et al.
patent: 2003/0186490 (2003-10-01), Kato et al.
patent: 2003/0209710 (2003-11-01), Yamazaki et al.
patent: 2003/0218169 (2003-11-01), Isobe et al.
patent: 2003/0218170 (2003-11-01), Yamazaki et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 2003/0218177 (2003-11-01), Yamazaki
patent: 2003/0219935 (2003-11-01), Miyairi et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: 2004/0016958 (2004-01-01), Kato et al.
patent: 2004/0016967 (2004-01-01), Yamazaki et al.
patent: 2004/0026696 (2004-02-01), Yamazaki et al.
patent: 2005/0020096 (2005-01-01), Miyairi et al.
patent: 2005/0029518 (2005-02-01), Kato et al.
patent: 2005/0029519 (2005-02-01), Yamazaki et al.
patent: 2005/0098784 (2005-05-01), Isobe et al.
patent: 1 049 144 (2000-11-01), None
patent: 1 067 593 (2001-01-01), None
patent: 62-104117 (1987-05-01), None
patent: 63-031108 (1988-02-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-070129 (1996-03-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-012891 (1998-01-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-084418 (1999-03-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-68520 (2000-03-01), None
patent: 2000-349296 (2000-12-01), None
patent: 2001-011085 (2001-01-01), None
patent: 2001-144027 (2001-05-01), None
patent: 2001-196599 (2001-07-01), None
patent: 2002-014337 (2002-01-01), None
patent: 2002-313811 (2002-10-01), None
patent: 2002-324808 (2002-11-01), None
patent: WO 2000/063956 (2000-10-01), None
M. W. Geis et al.,Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artifical Surface-Relief Grating and Laser Crystallization, Appl. Phys. Lett. vol. 35, No. 1, Jul. 1, 1979, pp. 71-74.
M.A. Baldo et al.,Very High-Efficiency Green Organic Light-Emitting Devices Based on Electrophosphorescence, Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
T.Tsutsui et al.,High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center, Jpn. J. Appl. Phys., vol. 38, Part 2, No. 12B, Dec. 15, 1999, pp. L1502-L1504.
M.A. Baldo et al.,Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices, Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
T. Tsutsui et al.,Electroluminescence in Organic Thin Films, Photochemical Processes in Organized Molecular Systems, Proceedings of the Memorial Conference for the late Professor Shigeo Tazuke, Sep. 22-24, 1990, pp. 437-450.
M. Kishino et al.,Physics of VLSI Device, Maruzen Col., Ltd., 1995, pp. 144-146.
H.W. Lam et al.,Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate, IEEE Electron Device Letters, vol. EDL-1, No. 10, Oct. 1980, pp. 206-208.
Henry I. Smith et al.,Oriented Crystal Growth on Amorphous Substrates Using Artificial Surface-Relief Gratings, Appl. Phys. Lett. 32(6), Mar. 1978, pp. 349-350.
D. K. Biegelsen et al.,Laser-Induced Crystallization of Silicon Islands on Amorphous Substrates: Multilayer Structures, Appl. Phys. Lett. 38(3), Feb. 1, 1981, pp. 150-152.
Geis et al., “Crystalline Silicon on Insulators by Graphoepitaxy,

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