Semiconductor device

Details Semiconductor device Semiconductor device

2007-08-28

2007-08-28

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S513000, C257S341000, C257S327000, C257S330000, C257S304000

Reexamination Certificate

active

10694903

ABSTRACT:
There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.

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USPTO Co-pending U.S. Appl. No. 10/421,919.
U.S. Appl. No. 10/694,903, filed Oct. 29, 2003, Okumura et al.
U.S. Appl. No. 10/983,658, filed Nov. 9, 2004, Tokano et al.
U.S. Appl. No. 10/694,903, filed Oct. 29, 2003, Okumura et al.
U.S. Appl. No. 11/117,331, filed Apr. 29, 2005, Kobayashi et al.

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