Semiconductor device

Details Semiconductor device Semiconductor device

2007-12-04

2007-12-04

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S565000

Reexamination Certificate

active

10975957

ABSTRACT:
A heterojunction bipolar transistor, having a structure in which a subcollector layer of a first conductive type having a higher doping concentration than a collector layer, a collector layer of the first conductive type, a base layer of the second conductive type, and an emitter layer of the first conductive type are deposited, in order, on a semi-insulating semiconductor substrate, and in which a hole barrier layer of semiconductor material with a band gap wider than that of the base layer is inserted between the base layer and the collector layer, so as to be in direct contact with the base layer.

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Machine translation of Japanese document 2004-022818, 16 pages, Mar. 5, 2007.
Rebecca J. Welty, et al., “Design and Performance of Tunnel Collector HBTs for Microwave Power Amplifiers”, IEEE Transactions on Electron Devices, vol. 50, No. 4, Apr. 2003, pp. 894-900.
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