Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-16

2007-10-16

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257S665000, C257S758000

Reexamination Certificate

active

10900205

ABSTRACT:
A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

REFERENCES:
patent: 4064493 (1977-12-01), Davis
patent: 5420456 (1995-05-01), Galbi et al.
patent: 5585663 (1996-12-01), Bezama et al.
patent: 5903041 (1999-05-01), La Fleur et al.
patent: 5990537 (1999-11-01), Endo et al.
patent: 6713837 (2004-03-01), Mori et al.
patent: 6872648 (2005-03-01), Friese et al.
patent: 6876057 (2005-04-01), Watanabe
patent: 361147548 (1986-07-01), None
patent: 2000-40790 (2000-02-01), None

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