Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-13

2007-02-13

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S461000

Reexamination Certificate

active

11438068

ABSTRACT:
A four-division photodetector where a formation process of an element isolation structure is simplified is provided. On a P-sub layer that is a common anode of PIN photodiodes (PIN-PD) for every partition, a high resistivity epitaxial layer that is an i layer of the PIN-PD is grown. At a boundary of the partitions, ion implantation is applied from a substrate surface to form an isolation region that is a P+region. When a cathode region formed for every partition and the P-sub layer are reverse-biased to operate the PIN-PD, the isolation region is set at a ground potential together with the P-sub layer to operate as an anode. As a result, in the epitaxial layer at a position sandwiched between the isolation region and the P-sub layer, a potential barrier to electrons is formed. As a result, electrons generated owing to light absorption in the respective partitions can be inhibited from moving to adjacent partitions and element isolation can thus be realized.

REFERENCES:
patent: 6114740 (2000-09-01), Takimoto et al.
patent: 6198146 (2001-03-01), Yamamoto et al.
patent: 6376871 (2002-04-01), Arai
patent: A 10-107243 (1998-04-01), None
patent: A 2001-60713 (2001-03-01), None

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