Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2007-08-07
2007-08-07
Owens, Douglas W. (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S735000, C257S692000
Reexamination Certificate
active
10975356
ABSTRACT:
A semiconductor device comprises a semiconductor element and a conductive member. The semiconductor element has a semiconductor substrate having first and second major surfaces; a semiconductor layer formed on the first major surface of the semiconductor substrate; a plurality of trenches formed on the semiconductor layer, the trenches being parallel to each other and extending to a first direction; filling material filling the trenches; a first electrode pad provided on the semiconductor layer and connected electrically to a first major electrode; a second major electrode provided on the second major surface; and a gate electrode pad provided on the semiconductor layer and connected to a gate electrode which controls conduction between the first major electrode and the second major electrode. The conductive member is connected to at least one of the first electrode pad and the gate electrode pad via a first contact area. A leading-out direction of the conductive member is substantially parallel to the first direction.
REFERENCES:
patent: 6740931 (2004-05-01), Kouzuki et al.
patent: 6979889 (2005-12-01), Jiang et al.
patent: 2006/0113656 (2006-06-01), Uang et al.
Aida Satoshi
Izumisawa Masaru
Kouzuki Shigeo
Yanagisawa Satoshi
Yoshioka Hironori
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3869971