Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-13

2007-02-13

Le, Dinh T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S110000, C123S644000

Reexamination Certificate

active

11105394

ABSTRACT:
A gate discharge resistor part is connected to the gate of an IGBT (Insulated Gate Bipolar Transistor). A timer circuit has its output connected to the input of the gate discharge resistor part and the input of a gate driving circuit. When an ON signal for driving the IGBT into an ON state stays input over a predetermined time period, the timer circuit outputs an H-level signal to the gate discharge resistor part and gate driving circuit. The gate driving circuit drives the IGBT into the OFF state based on the signal from the timer circuit. The gate discharge resistor part changes its resistance from a value given by a first resistor to a value given by a composite resistance of the first and second resistors.

REFERENCES:
patent: 6218709 (2001-04-01), Yasuda
patent: 6275093 (2001-08-01), Shekhawat et al.
patent: 6336448 (2002-01-01), Furuhata et al.
patent: 6441463 (2002-08-01), Yasuda
patent: 6684867 (2004-02-01), Ito et al.
patent: 2000-183341 (2000-06-01), None
patent: 2002-4991 (2002-01-01), None
patent: 2002-16254 (2002-01-01), None

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