Semiconductor device

Details Semiconductor device Semiconductor device

2007-12-18

2007-12-18

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S653000, C257S776000, C257SE29113, C257SE29327

Reexamination Certificate

active

10760503

ABSTRACT:
Leakage current generated in a PN junction diode is reduced, and charge-up current caused by plasma treatment in formation of wiring connected to the PN junction diode is controlled. An N+region as a first conductive type impurity region provided in a Si substrate with an upper surface being exposed on one main surface of the Si substrate, a P+polysilicon plug provided with a bottom being contacted with an upper surface of the N+region, and wiring connected to a top of the P+polysilicon plug are included.

REFERENCES:
patent: 5386138 (1995-01-01), Yoshino
patent: 5717250 (1998-02-01), Schuele et al.
patent: 5998837 (1999-12-01), Williams
patent: 6294426 (2001-09-01), Tu et al.
patent: 6838692 (2005-01-01), Lung
patent: 52-034674 (1977-03-01), None
patent: 03-022570 (1991-01-01), None
patent: 04-69939 (1992-03-01), None
patent: 5283715 (1993-10-01), None

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