Semiconductor device

Details Semiconductor device Semiconductor device

1996-07-02

1997-12-02

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257592, 257757, 437 31, H01L 27082

Patent

active

056939795

ABSTRACT:
A semiconductor device having a first insulation film, a base contact and a second insulation film on a semiconductor substrate. The first and second insulation films and the base contact respectively have openings which forms a hole extending therethrough on the substrate. An end of the base contact is projected over the substrate in the hole. A base connection region is in contact with the side and bottom faces of the projected end of the base contact and with a surface of a base region in the hole. An emitter region is formed in the base region. Reduced contact resistance between the base contact and the base connection region can be obtained.

REFERENCES:
patent: 3915767 (1975-10-01), Welliver
patent: 4975381 (1990-12-01), Taka et al.
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 5214302 (1993-05-01), Uchida et al.
patent: 5296391 (1994-03-01), Sato et al.

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