Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-11-27
2007-11-27
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257S750000, C257SE23145
Reexamination Certificate
active
11650935
ABSTRACT:
A semiconductor device is disclosed, which includes at least two layers superposed on each other in a stacking direction above a substrate, each of the layers including an insulating film a conductive layer films, a conductive plug electrically connected to the conductive layer, and at least one dummy via chain provided in the insulating films and stacked in the at least two layers, wherein the dummy via chain includes at least two reinforcing metal layers and at least one reinforcing plug.
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Notification of Reasons for Rejection (Office Action) for Chinese Patent Application No. 031565166, mailed Jun. 24, 2005 and English translation thereof.
Hasunuma Masahiko
Ito Sachiyo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Parekh Nitin
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