Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S758000, C257S750000, C257SE23145

Reexamination Certificate

active

11650935

ABSTRACT:
A semiconductor device is disclosed, which includes at least two layers superposed on each other in a stacking direction above a substrate, each of the layers including an insulating film a conductive layer films, a conductive plug electrically connected to the conductive layer, and at least one dummy via chain provided in the insulating films and stacked in the at least two layers, wherein the dummy via chain includes at least two reinforcing metal layers and at least one reinforcing plug.

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patent: 6559543 (2003-05-01), Dunham et al.
patent: 6559548 (2003-05-01), Matsunaga et al.
patent: 6617690 (2003-09-01), Gates et al.
patent: 6710391 (2004-03-01), Houston
patent: 6717267 (2004-04-01), Kunikiyo
patent: 6956289 (2005-10-01), Kunikiyo
patent: 7042099 (2006-05-01), Kurashima et al.
patent: 1477705 (2004-02-01), None
patent: 11-176835 (1999-07-01), None
patent: 11-307633 (1999-11-01), None
patent: 2001-196372 (2001-07-01), None
patent: 2001-267323 (2001-09-01), None
Notification of Reasons for Rejection (Office Action) for Chinese Patent Application No. 031565166, mailed Jun. 24, 2005 and English translation thereof.

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