Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2007-11-27
2007-11-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S230030
Reexamination Certificate
active
11325311
ABSTRACT:
A semiconductor device capable of accessing to the memory with a high speed, and comprising a memory with a large capacity. The semiconductor device comprises a plurality of memory banks (Bank)1to3where the write cycle time is twice as long as the read cycle and each provided with the separate write and read ports, and two cache data banks CD0and CD1, in which, for example, in the case that an external write instruction with continuous cycles is issued in cycle #2, the data of Bank2stored in CD1, Row2cannot be written back since Bank2is busy with the cycle #1, the data of Bank0stored in CD0, Row2can be written back instead.
REFERENCES:
patent: 5617347 (1997-04-01), Lauritzen
patent: 5825682 (1998-10-01), Fukui
patent: 7219185 (2007-05-01), Luick
patent: 2004/0225829 (2004-11-01), Akiyama et al.
Atwood Bryan
Watanabe Takao
Miles & Stockbridge P.C.
Phung Anh
Renesas Technology Corp.
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