Semiconductor device

Details Semiconductor device Semiconductor device

1991-04-18

1994-03-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257539, 257581, H01L 2972

Patent

active

052987850

ABSTRACT:
A multi-emitter type semiconductor device having multiple transistors coupled in parallel which utilize a common substrate. Between a selected emitter electrode and a base contact, a stabilizing resistive region is formed in the common substrate. In order to reduce the parasitic effects due to this region an additional emitter ballast resistor may be formed on the surface of an insulating layer over the substrate. This supplemental resistor formed on the insulating layer is made from polycrystalline silicon. Alternatively, the supplemental resistor can be combined with the resistance of the stabilizing region in a single resistor located on the surface of the insulating layer.

REFERENCES:
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4370670 (1983-01-01), Nawata et al.
patent: 4500900 (1985-02-01), Shimizu
patent: 4579600 (1986-04-01), Shah et al.
patent: 4586072 (1986-04-01), Nakatani et al.
patent: 4626886 (1986-12-01), Tihanyi
patent: 4680608 (1987-07-01), Tsuzuki et al.
patent: 5053847 (1991-10-01), Ito et al.
Patent Abstracts of Japan, vol. 11, No. 88, JP-A-61 242 071, Oct. 28, 1986.

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