Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-06

2007-02-06

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S503000, C257S516000, C257SE29012

Reexamination Certificate

active

11248213

ABSTRACT:
In a semiconductor device in which a control circuit region and a power transistor region are formed, a first dummy region is formed between a ground side transistor composing a push-pull circuit and the control circuit region while a second dummy region is formed between the ground side transistor and the end part of a semiconductor substrate. The first and second dummy regions have a conductive type different from that of the semiconductor substrate. The second dummy region is connected electrically to a part of the semiconductor substrate between the ground side transistor and the first dummy region.

REFERENCES:
patent: 5892268 (1999-04-01), Yashita et al.
patent: 6525392 (2003-02-01), Leonardi
patent: 2005/0082632 (2005-04-01), Kanda et al.
patent: 07-135299 (1995-05-01), None

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