Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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Details

C257S203000, C257S209000, C257S210000, C257S211000

Reexamination Certificate

active

11027058

ABSTRACT:
A basic cell placed in a semiconductor device comprises a via contact placed on a wiring grid having a pitch narrower than a pitch between a contact placed in a source region and a contact placed in a drain region of a transistor in a basic cell, and a wiring layer connected to the via contact, being used as a source terminal, a drain terminal, and a gate terminal of the transistor.

REFERENCES:
patent: 5929469 (1999-07-01), Mimoto et al.
patent: 6525350 (2003-02-01), Kinoshita et al.
patent: 6617621 (2003-09-01), Gheewala et al.
patent: PH6-188397 (1994-07-01), None
patent: PH8-18021 (1996-01-01), None
patent: PH8-51194 (1996-02-01), None
patent: 3527483 (2004-02-01), None

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